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PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
Rev. 01 -- 23 November 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 C; VGS = 10 V; see Figure 1 Tmb = 25 C; see Figure 2
[1]
Symbol Parameter drain current total power dissipation drain-source on-state resistance
Min -
Typ -
Max 100 100 306
Unit V A W
drain-source voltage Tj 25 C; Tj 175 C
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 4.3 5.6 m
[1]
Continious current limited by package.
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name PSMN5R6-100PS TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM
[1]
Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C; tp 10 s; pulsed; Tmb = 25 C
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj 25 C; Tj 175 C Tj 25 C; Tj 175 C; RGS = 20 k VGS = 10 V; Tj = 100 C; see Figure 1 VGS = 10 V; Tmb = 25 C; see Figure 1 tp 10 s; pulsed; Tmb = 25 C; see Figure 3 Tmb = 25 C; see Figure 2
[1]
Min -20 -55 -55 -
Max 100 100 20 95 100 539 306 175 175 100 539
Unit V V V A A A W C C A A
Source-drain diode
Continious current limited by package.
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
2 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
150 ID (A) (1) 100
003aad683
120 Pder (%) 80
03aa16
50
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 Tmb (C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aad702
103 ID (A) 102 Limit RDSon = VDS / ID 10 s 100 s
10
DC
1
1 ms 10 ms 100 ms
10-1 1 10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
3 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 0.3 Max 0.49 Unit K/W thermal resistance from junction to see Figure 4 mounting base
1 Zth (K/W) 10-1
003aad684
= 0.5 0.2 0.1 0.05 tp T
10-2
0.02 single shot
P
=
tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s)
t
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
4 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) VGSth Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 A; VGS = 0 V; Tj = 25 C ID = 250 A; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS= VGS; Tj = 25 C; see Figure 8 and 9 ID = 1 mA; VDS= VGS; Tj = 175 C; see Figure 9 ID = 1 mA; VDS= VGS; Tj = -55 C; see Figure 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 100 V; VGS = 0 V; Tj = 25 C VDS = 100 V; VGS = 0 V; Tj = 175 C VGS = -20 V; VDS = 0 V; Tj = 25 C VGS = 20 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 RG QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr gate resistance total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 17 IS = 25 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 50 V VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 15 and 16 VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 15 VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 15 and 16 VDS = 50 V; RL = 0.6 ; VGS = 10 V; RG(ext) = 1.5 f = 1 MHz ID = 80 A; VDS = 50 V; VGS = 10 V; see Figure 13 and 14 Dynamic characteristics 141 36 43 8061 561 330 31 46 83 34 0.79 67 182 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC Min 100 90 2 1 Typ 3 0.02 2 2 4.3 0.97 Max 4 4.6 1 500 100 100 15.7 5.6 Unit V V V V V A A nA nA m m
Static characteristics
Source-drain diode
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
5 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
160 ID (A) 120 6 8 10 5.5 5
003aad685
250 gfs (S) 200
003aad692
150 4.5 80 100 40 50 VGS (V) = 4 0 0 0.5 1 1.5 VDS (V) 2 0 0 20 40 60 80 ID (A) 100
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
003aad687
Fig 6.
Forward transconductance as a function of drain current; typical values
03aa35
160 ID (A) 120
10-1 ID (A) 10-2 min typ max
10-3 80 10-4 40 Tj = 175 C
Tj = 25 C
10-5
0 0 2 4 VGS (V) 6
10-6 0 2 4 VGS (V) 6
Fig 7.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 8.
Sub-threshold drain current as a function of gate-source voltage
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
6 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
5 VGS(th) (V) 4 max
003aad280
3.2 a 2.4
003aad774
3
typ 1.6
2
min 0.8
1
0 -60
0
60
120 Tj (C)
180
0 -60
0
60
120
Tj (C)
180
Fig 9.
Gate-source threshold voltage as a function of junction temperature
003aad688
Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature
10 RDSon (m) 8 VGS (V) = 4.5
003aad689
10 RDSon (m) 8
6 6 4 4 2 5 5.5 6
8 10 15
0 4 8 12 16 VGS (V) 20
2 0 20 40 60 80 ID (A) 100
Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values
Fig 12. Drain-source on-state resistance as a function of drain current; typical values
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
7 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
10 VGS (V) 8 VDS = 20 V 6
003aad694
VDS ID VGS(pl) VGS(th)
VDS = 50 V
4
VGS QGS1 QGS2 QGD QG(tot)
003aaa508
2
QGS
0 0 40 80 120 160 QG (nC)
Fig 13. Gate-source voltage as a function of gate charge; typical values
105 C (pF)
003aad691
Fig 14. Gate charge waveform definitions
16000 C (pF) 12000
003aad686
Ciss
104
Ciss Crss
8000
103
Coss 4000 Crss
102 10-1
1
10
VDS (V)
102
0 0 4 8 VGS (V) 12
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
Fig 16. Input and reverse transfer capacitances as a function of gate-source voltage, typical values
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
8 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
200 IS (A) 160
003aad693
120
80 Tj = 175 C 40 Tj = 25 C
0 0 0.3 0.6 0.9 VSD (V) 1.2
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
9 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 18. Package outline SOT78 (TO-220AB)
PSMN5R6-100PS_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
10 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
8. Revision history
Table 7. Revision history Release date 20091123 Data sheet status Product data sheet Change notice Supersedes Document ID PSMN5R6-100PS
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
11 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com.
9.2
Definitions
Draft-- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet-- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications-- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data-- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values-- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale-- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license-- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control-- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.3
Disclaimers
General-- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes-- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use-- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS-- is a trademark of NXP B.V.
10. Contact information
For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com
PSMN5R6-100PS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 23 November 2009
12 of 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m standard level MOSFET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 November 2009 Document identifier: PSMN5R6-100PS_1

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